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27 December 1996 Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography
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Abstract
We surveyed more than 150 different materials as candidates for optically tunable (at 248 nm and 193 nm), attenuating embedded phase-shift masks. Multicomponent materials with four distinct microstructures: (1) composites, (2) cermets, (3) multilayers, and (4) copolymers, where one component was optically clear at the application wavelength and the other component more optically absorbing, provided a systematic approach for adjusting the needed optical properties: specifically, optical transmission and (pi) -phase-shift. From evaluation of optical properties and other mask manufacturability issues, including chemical and radiation durability, etch selectivity, alignment and inspection properties, film stress and adhesion, we identified promising nitride and oxide materials based on MNx-AIN (M equals Cr, Mo, W,...) and M'Oy-RuO2 (M' equals Al, HF, Zr...) as well as promising polymers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter F. Carcia, Roger H. French, Kenneth G. Sharp, Jeff S. Meth, and Bruce W. Smith "Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193-nm photolithography", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262809
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