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24 September 1996 0.808-μm InGaAsP/GaAs SCH lasers
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Proceedings Volume 2886, Semiconductor Lasers II; (1996)
Event: Photonics China '96, 1996, Beijing, China
This paper presents new results obtained recently in studies of separate confinement structure InGaAsP/lasers. Using Russia's technology, the InGaAsP/GaAs lasers based on QW structure can be produced y a short-time liquid phase epitaxy employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 100 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the following values of the main parameters were obtained: lasing wavelength (lambda) equals 808 micrometers , threshold current density Jth equals 100A/cm2, and power conversion efficiency N $eq 56 percent at a CW power of 1W for a laser with a stripe width W equals 100micrometers .
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoren Zhu, Xingde Zhang, Baoxue Bo, Baoshun Zhang, and Zonghe Yang "0.808-μm InGaAsP/GaAs SCH lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996);


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