Paper
24 September 1996 Application of Zn diffusion in reducing the series resistance of the P-distributed Bragg reflector in GaAs/GaA1As vertical cavity surface emitting lasers
Honghai Gao, ShiMing Lin, Junhua Gao, Xuejun Kang, Hongjie Wang, Lixuan Wan
Author Affiliations +
Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251920
Event: Photonics China '96, 1996, Beijing, China
Abstract
Due to the potential barriers in the heterointerfaces of quarter wavelength stack layers of the distribute Bragg reflector (DBR) in vertical cavity surface emitting lasers, P-DBR has a very large series resistance. The paper reported a method of reducing this series resistance by Zn diffusion. By this way, we have achieved continue wave vertical cavity surface emitting lasers.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Honghai Gao, ShiMing Lin, Junhua Gao, Xuejun Kang, Hongjie Wang, and Lixuan Wan "Application of Zn diffusion in reducing the series resistance of the P-distributed Bragg reflector in GaAs/GaA1As vertical cavity surface emitting lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251920
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KEYWORDS
Vertical cavity surface emitting lasers

Diffusion

Zinc

Resistance

Semiconducting wafers

Reflectors

Semiconductors

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