Deep levels in HgCdTe photodetectors

Junyong Kang; Qisheng Huang

doi:10.1117/12.251923

24 September 1996 Deep levels in HgCdTe photodetectors

Junyong Kang, Qisheng Huang

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251923
Event: Photonics China '96, 1996, Beijing, China

Abstract

Hg_1-xCd_xTe infrared photodetectors with high CdTe mole fraction of x equals 0.50-0.65 were studied by deep level transient spectroscopy and photocapacitance measurement. Two electron traps, E₁ and E₂, were observed in all samples. The thermal emission activation energies and capture barriers of the two electron traps were determined by DLTS and were observed to depend on CdTe mole fraction x. In the sample with CdTe mole fraction of x equals 0.60, the binding energies of E₁ and E₂ are about 0.30 and 0.45 eV, respectively. At nearly the same values of the binding energies, the capacitance changes also appeared in the steady-state photocapacitance spectra of the samples, which indicates the small lattice relaxation of the two electron traps. The physical origins of the electron traps are discussed.

Citation Download Citation

Junyong Kang and Qisheng Huang "Deep levels in HgCdTe photodetectors", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251923

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