MBE growth of high-quality GaAs heterostructures for optoelectronic devices

Zengqi Zhou; Yaowang Lin; Zhichuan Niu; Chao Yong Li

doi:10.1117/12.251921

24 September 1996 MBE growth of high-quality GaAs heterostructures for optoelectronic devices

Zengqi Zhou, Yaowang Lin, Zhichuan Niu, Chao Yong Li

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251921
Event: Photonics China '96, 1996, Beijing, China

Abstract

The purity of GaAs grown by MBE was improved significantly when the MBE system was modified. The AlGaAs/GaAs quantum well heterostructures for mid-infrared detectors and two color infrared detector and InGaAs/GaAs quantum well heterostructure for vertical cavity surface emitting laser were grown successfully.

Citation Download Citation

Zengqi Zhou, Yaowang Lin, Zhichuan Niu, and Chao Yong Li "MBE growth of high-quality GaAs heterostructures for optoelectronic devices", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251921

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