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24 September 1996 MBE growth of low-threshold-current InGaAs VCSEL structure
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251905
Event: Photonics China '96, 1996, Beijing, China
Abstract
The structures of InGaAs/GaAs strained QW vertical cavity suurface-emitting lasers with low threshold current have been grown on tilted substrate by a modificatoy MBE system. The VCSEL structure contains 23.5 pairs n-type DBR , a strained InGaAs/GaAs 3QW active region ,and 20.5 pairs p-type DBR. The emission wavelength of InxGaixAs IGaAs QW lasers as a function of indium contents (x) and QW width has been studied theoretically and experimentally. The experimental results compared with theoretical calcuulation were in good agreement. The device measurements showed that room temperature CW operation of VCSEL has been achieved with the threshold current as low as 0.7 mA at 9430 A wavelength, and quantum efficiency above 12%.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaowang Lin, Zengqi Zhou, Zhongqi Pan, Zhichuan Niu, Chao Yong Li, and Rong Han Wu "MBE growth of low-threshold-current InGaAs VCSEL structure", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251905
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