Paper
20 September 1996 Physical properties and optical recording performance of In47Sb14Te39 phase change thin films using 514.5-nm wavelength laser beam
Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, Fuxi Gan
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Abstract
Physical properties of In47Sb14Te39 thin films prepared by DC magnetron sputtering method are studied. X- ray diffraction and DSC results indicate that the crystallization compounds include mainly In3SbTe2 with small amounts of InTe, In2Te3. Optical recording test of the films state clearly that larger reflectivity contrast can be obtained at lower power Argon laser irradiation. The erasing contrast is comparatively lower but can be improved by multi-films match.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, and Fuxi Gan "Physical properties and optical recording performance of In47Sb14Te39 phase change thin films using 514.5-nm wavelength laser beam", Proc. SPIE 2890, Optical Recording, Storage, and Retrieval Systems, (20 September 1996); https://doi.org/10.1117/12.251980
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KEYWORDS
Reflectivity

Thin films

Optical recording

Crystals

Optical storage

Optical testing

Glasses

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