Physical properties and optical recording performance of In47Sb14Te39 phase change thin films using 514.5-nm wavelength laser beam

Liqiu Q. Men; Fusong S. Jiang; Chao Liu; Huiyong Liu; Fuxi Gan

doi:10.1117/12.251980

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20 September 1996 Physical properties and optical recording performance of In₄₇Sb₁₄Te₃₉ phase change thin films using 514.5-nm wavelength laser beam

Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, Fuxi Gan

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Proceedings Volume 2890, Optical Recording, Storage, and Retrieval Systems; (1996) https://doi.org/10.1117/12.251980
Event: Photonics China '96, 1996, Beijing, China

Abstract

Physical properties of In₄₇Sb₁₄Te₃₉ thin films prepared by DC magnetron sputtering method are studied. X- ray diffraction and DSC results indicate that the crystallization compounds include mainly In₃SbTe₂ with small amounts of InTe, In₂Te₃. Optical recording test of the films state clearly that larger reflectivity contrast can be obtained at lower power Argon laser irradiation. The erasing contrast is comparatively lower but can be improved by multi-films match.

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Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, and Fuxi Gan "Physical properties and optical recording performance of In₄₇Sb₁₄Te₃₉ phase change thin films using 514.5-nm wavelength laser beam", Proc. SPIE 2890, Optical Recording, Storage, and Retrieval Systems, (20 September 1996); https://doi.org/10.1117/12.251980

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