GaAs/GaAlAs multiple quantum well electroreflectance modulators

Hongda Chen; Zhibiao Chen; Wen Gao; Rong Han Wu

doi:10.1117/12.253173

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30 September 1996 GaAs/GaAlAs multiple quantum well electroreflectance modulators

Hongda Chen, Zhibiao Chen, Wen Gao, Rong Han Wu

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Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253173
Event: Photonics China '96, 1996, Beijing, China

Abstract

In this paper, physical analyses on the characterization of the electroreflectance modulator are concerned, which include quantum confined Stark effect and asymmetric Fabry- Perot cavity effect and so on. Experimental results are provided to demonstrate the properties of normally-off and normally-on devices. The developed technology is used to tune the mode to the proper position to improve the contrast ratio of modulators.

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Hongda Chen, Zhibiao Chen, Wen Gao, and Rong Han Wu "GaAs/GaAlAs multiple quantum well electroreflectance modulators", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253173

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