Photonic-integrated circuits and components using quantum well intermixing

Jian Jun He; Emil S. Koteles; Philip J. Poole; Yan Feng; M. Davis; N. Sylvain Charbonneau; Richard D. Goldberg; Ian V. Mitchell

doi:10.1117/12.253161

30 September 1996 Photonic-integrated circuits and components using quantum well intermixing

Jian Jun He, Emil S. Koteles, Philip J. Poole, Yan Feng, M. Davis, N. Sylvain Charbonneau, Richard D. Goldberg, Ian V. Mitchell

Author Affiliations +

Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253161
Event: Photonics China '96, 1996, Beijing, China

Abstract

The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO₂ layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.

Citation Download Citation

Jian Jun He, Emil S. Koteles, Philip J. Poole, Yan Feng, M. Davis, N. Sylvain Charbonneau, Richard D. Goldberg, and Ian V. Mitchell "Photonic-integrated circuits and components using quantum well intermixing", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253161

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