Paper
30 September 1996 Reflectivity from multiple quantum well modulator with contrast ratio of 22:1 at 1.55 um
John E. Cunningham, Joseph Earl Ford, William Jan, R. N. Pathak
Author Affiliations +
Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253206
Event: Photonics China '96, 1996, Beijing, China
Abstract
We demonstrate the performance of InGaAs/InP multiple quantum well modulators for fiber access applications. On/off contrast ratios in reflectivity are 22:1 with a 10:1 level extending over a 26 nm bandwidth at 1.55 micrometers . The methodology to produce such devices is described within.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John E. Cunningham, Joseph Earl Ford, William Jan, and R. N. Pathak "Reflectivity from multiple quantum well modulator with contrast ratio of 22:1 at 1.55 um", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253206
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Cited by 2 scholarly publications.
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KEYWORDS
Modulators

Reflectivity

Quantum wells

Superlattices

Indium gallium arsenide

Chromium

Modulation

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