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25 September 1996 Interface properties of HgCdTe passivated with the combination of CdS and ZnS
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Abstract
The process for forming CdS and ZnS films on n and p type of HgCdTe with x - 0.218 in aqueous sulfide solutions is described. The XPS analysis was carried out and photodiodes passivated with deferent thickness of sulfide were fabricated to assess the validity of the procedure. The results indicate that the native sulfide layers formed in this way show almost the same properties as those grown in nonaqueous solutions.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gehong Zeng, Jingshao Zhang, and Tianzhu Shen "Interface properties of HgCdTe passivated with the combination of CdS and ZnS", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252086
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