Paper
30 September 1996 Metalorganic chemical vapor deposition of BaTiO3 thin film and its physical properties
Hui Wang, J.M. Zeng, Z. H. Wang, M. Wang, S. X. Shang
Author Affiliations +
Proceedings Volume 2896, Photorefractive Materials; (1996) https://doi.org/10.1117/12.253243
Event: Photonics China '96, 1996, Beijing, China
Abstract
BaTiO3 is a typical perovskite ferroelectric with unique photorefractive, electro-optic and dielectric properties, the thin film of BaTiO3 is suitable to be used in integrated optic and photorefractive devices. In this paper we report the growth of BaTiO3 thin film on Si (100) substrate by atmospheric pressure metalorganic chemical vapor deposition technique. The souse materials used were Ba(thd)2 and titanium isopropoxied. The substrate temperature was from 620 degrees Celsius to 780 degrees Celsius. The orientation of as-grown BaTiO3 films is dependent on growth temperature. The dielectric constant ((epsilon) ) and loss tangent (tan(delta) ) of BaTiO3 film with (001) orientation are found to be 114 and 0.02, respectively, for a 0.8 micrometer-thick film at room temperature. The remanent polarization (Pr) was 2.3 (mu) C/cm2 and coercive field (Ec) was 14 KV/cm.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Wang, J.M. Zeng, Z. H. Wang, M. Wang, and S. X. Shang "Metalorganic chemical vapor deposition of BaTiO3 thin film and its physical properties", Proc. SPIE 2896, Photorefractive Materials, (30 September 1996); https://doi.org/10.1117/12.253243
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KEYWORDS
Ferroelectric materials

Thin films

Dielectrics

Silicon

Silicon films

Metalorganic chemical vapor deposition

Dielectric polarization

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