Investigation of the ion-implanted PbSe crystal

Jiancheng Zhang; Wenhai Wu

doi:10.1117/12.252980

3 October 1996 Investigation of the ion-implanted PbSe crystal

Jiancheng Zhang, Wenhai Wu

Proceedings Volume 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications; (1996) https://doi.org/10.1117/12.252980
Event: Photonics China '96, 1996, Beijing, China

Abstract

In order to fabricate the photodiode, P-type of PbSe, was implanted by phosphorus ion(P++)) to form p-n junctions in the materials with incident energy of E_o equals 200 keV and doses of Ds equals 1 multiplied by 10¹⁴, 5 multiplied by 10¹⁴, 5 multiplied by 10¹⁵ ions/cm², respectively. Rp, (Delta) Rp and the depth of the junction were measured and theoretically calculated by means of modification of LSS theory and Bragg principle. The results show that the experimental data of Rp are in agreement with computer simulation, and the electrical parameters of the p-n junctions in PbSe are also discussed. PbSe photodiode was by ionic implantation with performances, ideal factor of diode m equals 2.31, diffusion length L equals 51.4 micrometer, diffusion coefficient D equals 26.52 cm²/s, non-equilibrium minority carrier lifetime (tau) equals 9.96 multiplied by 10^-7s.

Citation Download Citation

Jiancheng Zhang and Wenhai Wu "Investigation of the ion-implanted PbSe crystal", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252980

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