Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

Liqiu Q. Men; Fusong S. Jiang; Chao Liu; Huiyong Liu; Fuxi Gan

doi:10.1117/12.248700

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3 September 1996 Short-wavelength optical storage properties of GeSb₂Te₄ phase-change thin films

Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, Fuxi Gan

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Proceedings Volume 2931, Fourth International Symposium on Optical Storage (ISOS '96); (1996) https://doi.org/10.1117/12.248700
Event: Fourth International Symposium on Optical Storage, 1996, Shenzhen, Guangdong Province, China

Abstract

The optical properties of GeSb₂Te₄ thin films prepared by vacuum RF-sputtering method at the wavelength region of 400 - 830 nm were studied. A comparatively large absorption was observed in the wavelength range 400 - 600 nm, which matches with the wavelengths of Argon laser. The optical storage characterizations of GeSb₂Te₄ thin film demonstrate clearly that larger reflectivity contrast can be obtained at lower power Argon laser (514.5 nm) irradiation. The erasing contrast is relatively lower but can be improved by multi-layer films match.

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Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, and Fuxi Gan "Short-wavelength optical storage properties of GeSb₂Te₄ phase-change thin films", Proc. SPIE 2931, Fourth International Symposium on Optical Storage (ISOS '96), (3 September 1996); https://doi.org/10.1117/12.248700

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