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3 September 1996 Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films
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Proceedings Volume 2931, Fourth International Symposium on Optical Storage (ISOS '96); (1996) https://doi.org/10.1117/12.248700
Event: Fourth International Symposium on Optical Storage, 1996, Shenzhen, Guangdong Province, China
Abstract
The optical properties of GeSb2Te4 thin films prepared by vacuum RF-sputtering method at the wavelength region of 400 - 830 nm were studied. A comparatively large absorption was observed in the wavelength range 400 - 600 nm, which matches with the wavelengths of Argon laser. The optical storage characterizations of GeSb2Te4 thin film demonstrate clearly that larger reflectivity contrast can be obtained at lower power Argon laser (514.5 nm) irradiation. The erasing contrast is relatively lower but can be improved by multi-layer films match.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liqiu Q. Men, Fusong S. Jiang, Chao Liu, Huiyong Liu, and Fuxi Gan "Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films", Proc. SPIE 2931, Fourth International Symposium on Optical Storage (ISOS '96), (3 September 1996); https://doi.org/10.1117/12.248700
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