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4 February 1997 Atomic-layer-deposited TiO2 dielectric coatings
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Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997)
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
The possibilities of the in situ real-time Brewster-angle interferometric reflectance probe to follow cycle-dependent film-quality changes during the atomic layer deposition (ALD) are investigated. Experiments are centered around the growth of amorphous TiO2 thin films on fused quartz substrates in a traveling-wave reactor using TiCl4 and H2O as reactants. It is concluded that ALD has prospects for the preparation of microstructurally homogeneous low- optical-loss TiO2 films in case the precise thickness control is needed. The main problem is the microporosity of the films and as a result their moderate refractive index.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Rosental, A. Tarre, A. Gerst, P. Adamson, V. Sammelselg, and T. Uustare "Atomic-layer-deposited TiO2 dielectric coatings", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997);

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