Analysis of fully depleted differential double-heterojunction optical thyristor using MQWs and mirror layers

Jeong-Ho Lee; Byeong-Gee Kim; Young-Wan Choi

doi:10.1117/12.275583

6 June 1997 Analysis of fully depleted differential double-heterojunction optical thyristor using MQWs and mirror layers

Jeong-Ho Lee, Byeong-Gee Kim, Young-Wan Choi

Author Affiliations +

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275583
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Switching characteristics of a novel PnpN optical thyristor are studied by using coupled junction model associated with current oriented method. Though the simulation method is simple, obtained quantitative results on the switching characteristics of a depleted optical thyristor (DOT) are in good agreement with reported experimental data. In this method, we can successfully explain the switching mechanism of PnpN thyristor easily. With this method we analyze our novel thyristor structure which employs multiple quantum wells (MQWs) in center light absorbing layers and bottom mirror made of quarter wavelength reflector stacks (QWRS). Simulated results show that switching characteristics of the MQWs and QWRS DOT (MQ-DOT) enhance those of previously reported structure. Considering the same device parameters such as doping concentrations and layer widths, it is expected that MQ-DOT can operate with only 55 % of the external optical power ofthe previous top-recorded PnpN structure. Keywords : DHOT, MQ-DOT, coupledjunction model, optical switching, switching characteristics

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Jeong-Ho Lee, Byeong-Gee Kim, and Young-Wan Choi "Analysis of fully depleted differential double-heterojunction optical thyristor using MQWs and mirror layers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275583

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KEYWORDS

Switching

Diodes

Mirrors

Optical switching

Absorption

Resistance

Doping

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