Paper
6 June 1997 Detection of lateral composition modulation in an (InAs)n/(GaAs)n short-period superlattice on InP by magnetoexciton spectroscopy
Eric D. Jones, Joanna Mirecki-Millunchick, David M. Follstaedt, Michael J. Hafich, Seok-Won Lee, John L. Reno, Ray D. Twesten, Yongliang Zhang, Angelo J. Mascarenhas
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Abstract
An experimental signature for detecting spontaneous lateral composition modulation in a (InAs)n/(GaAs)n short period superlattice on a InP substrate based on magnetoexciton spectroscopy is presented. We find by aligning the magnetic field in three crystallographic directions, one parallel to and the other two perpendicular to the composition modulation direction, that the magnetoexciton shifts are anisotropic and are a good indicator for the present of composition modulation.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric D. Jones, Joanna Mirecki-Millunchick, David M. Follstaedt, Michael J. Hafich, Seok-Won Lee, John L. Reno, Ray D. Twesten, Yongliang Zhang, and Angelo J. Mascarenhas "Detection of lateral composition modulation in an (InAs)n/(GaAs)n short-period superlattice on InP by magnetoexciton spectroscopy", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275597
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Cited by 2 scholarly publications.
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KEYWORDS
Modulation

Magnetism

Surface plasmons

Spectroscopy

Superlattices

Excitons

Silicon

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