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6 June 1997 Lasing modes in highly confined semiconductor microcavities
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Abstract
The ability to tailor the emission characteristics through use of a microcavity has become an interesting topic for fabricating improved forms of light emitters. For semiconductor light emitters the novel cavity physics also complements the technological importance, and the advanced fabrication techniques allow for mode confinement presently in the volume range of tens of cubic emission wavelengths. In this paper we discuss the mode confinement possible with Fabry-Perot semiconductor microcavities that both have extremely short cavity lengths and contain embedded dielectric regions.WHile this confinements mechanism was discovered in late 1993, it was not at first clearly understood. Today we have a much better understanding of this system, and it becomes clear that it can impact a broad range of microcavity light emitters. In addition, we discuss combining the 3D confinement of the microcavity with 3D confinement of the electronic carriers, and demonstrate room-temperature lasing from quantum dot vertical-cavity surface-emitting lasers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dennis G. Deppe, Diana L. Huffaker, Hongyu Deng, Tchang-Hun Oh, and Qing Deng "Lasing modes in highly confined semiconductor microcavities", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275570
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