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1 May 1997 Demonstration of a nanolithographic system using a self-assembled monolayer resist for neutral atomic cesium
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This paper describes the formation of nanometer-scale features in gold and silicon substrates. The features in gold were made by using a self-assembled monolayer (SAM) of nonanethiolate on gold as a resist damaged by neutral cesium atoms. A SAM resist of octyltrichlorosilane on silicon dioxide was used as a resist sensitive to cesium atoms in order to fabricate features in silicon. A silicon nitride membrane perforated with nm- and micrometers -scale holes was used to pattern the atomic beam. Etching transferred the pattern formed in the SAM layer into the underlying substrate. Features of < 100-nm size were etched into the gold and silicon substrates. Investigations of the reflectivity of samples of nonanethiolate on gold, exposed to the atomic beam without a mask and subsequently etched, revealed that the resist-etch system exhibited a minimum threshold dose of cesium for damage; at doses lower than approximately 3 monolayers, the damage was insufficient to allow penetration of the SAM by the etching solution. The threshold dose for damage of the octyltrichlorosilane SAM on silicon dioxide is under investigation.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rebecca J. Younkin, Karl K. Berggren, Eunice L. Cheung, Kent S. Johnson, Mara Goff Prentiss, Andrew J. Black, George M. Whitesides, D. C. Ralph, Charles T. Black, and Michael Tinkham "Demonstration of a nanolithographic system using a self-assembled monolayer resist for neutral atomic cesium", Proc. SPIE 2995, Atom Optics, (1 May 1997);

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