Photoelectroluminescent electric field intensity sensor

Tadeusz Pustelny

doi:10.1117/12.264198

23 January 1997 Photoelectroluminescent electric field intensity sensor

Tadeusz Pustelny

Proceedings Volume 2998, Photosensitive Optical Materials and Devices; (1997) https://doi.org/10.1117/12.264198
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The possibility of using electroluminescent semiconductors of the II-VI group to be used in the construction of the electric field intensity sensors is discussed. The idea of contact-free method of the electric field intensity measurement is based on the influence of electric field on optical properties of electroluminescent ZnS:Mn and ZnS⁺CdS:Mn semiconductors. The sensors presented do not belong to the group of intensity sensors. These luminescent fiber optic sensors are going to be applied in the future in high voltage electric equipment.

Citation Download Citation

Tadeusz Pustelny "Photoelectroluminescent electric field intensity sensor", Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); https://doi.org/10.1117/12.264198

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