GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Zane A. Shellenbarger; Michael G. Mauk; Mark Gottfried; Joseph D. Lesko; Louis C. DiNetta

doi:10.1117/12.271198

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15 April 1997 GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Zane A. Shellenbarger, Michael G. Mauk, Mark Gottfried, Joseph D. Lesko, Louis C. DiNetta

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Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271198
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Progress on mid-IR photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb and InAsSbP on GaSb substrates is reported. Both p/n junction and avalanche photodiode structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Room temperature detectivity of 1.85 X 10⁸ cmHz^1/2/W was measured for GaInAsSb detectors, while room-temperature avalanche multiplication gain of 20 was measured on AlGaAsSb/GaInAsSb avalanche photodiodes. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometers and 4.4 micrometers respectively.

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Zane A. Shellenbarger, Michael G. Mauk, Mark Gottfried, Joseph D. Lesko, and Louis C. DiNetta "GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271198

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