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15 April 1997 GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
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Abstract
Progress on mid-IR photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb and InAsSbP on GaSb substrates is reported. Both p/n junction and avalanche photodiode structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Room temperature detectivity of 1.85 X 108 cmHz1/2/W was measured for GaInAsSb detectors, while room-temperature avalanche multiplication gain of 20 was measured on AlGaAsSb/GaInAsSb avalanche photodiodes. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometers and 4.4 micrometers respectively.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zane A. Shellenbarger, Michael G. Mauk, Mark Gottfried, Joseph D. Lesko, and Louis C. DiNetta "GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271198
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