Translator Disclaimer
15 April 1997 Very long wavelength GaAs/GaInP quantum well infrared photodetectors
Author Affiliations +
We demonstrate long wavelength quantum well infrared photodetectors with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstrom, which resulted in a detection peak at 13 micrometers and a cutoff wavelength of 15 micrometers . Dark current measurements of the samples with 15 micrometers cutoff wavelength show low dark current densities. The dark current characteristics have been investigated as a function of temperature and electron density in the well and compared to a model which takes into account thermionic emission and thermally assisted tunneling. The model is used to extract a saturation velocity of 1.5 X 105 cm/s for electrons. The photoelectron lifetime before recapture has been deduced from this carrier velocity and photoconductive gain measurements. The lifetime is found to be approximately 5 ps. Preliminary focal plane array imaging is demonstrated.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Louis Jelen, Steven Slivken, Gail J. Brown, and Manijeh Razeghi "Very long wavelength GaAs/GaInP quantum well infrared photodetectors", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997);

Back to Top