Progress in development of a monolithic 680-nm MOPA

Bardia Pezeshki; Jules S. Osinski; Hanmin Zhao; Atul Mathur

doi:10.1117/12.273780

2 May 1997 Progress in development of a monolithic 680-nm MOPA

Bardia Pezeshki, Jules S. Osinski, Hanmin Zhao, Atul Mathur

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273780
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The various components for red MOPAs (Master Oscillator Power Amplifier) have been demonstrated and exhibit excellent performance. A major impediment has been the regrowth over material with high aluminum concentration, necessary for short wavelength operation. Nevertheless, amplifiers, DFB, and DBR lasers have been demonstrated in discrete form. Single frequency DBR and DFB lasers using a buried diffraction grating emit over 20 mW with efficiencies of up to 0.4 W/A. The DBR can be tuned over 3 nm using current injection in the grating, and preliminary lifetests indicate good reliability. Discrete flared amplifiers exhibited nearly 1.6 W pulsed, and 500 mW CW output power. The performance of the individual devices and integration issues in developing the MOPA will be discussed.

Citation Download Citation

Bardia Pezeshki, Jules S. Osinski, Hanmin Zhao, and Atul Mathur "Progress in development of a monolithic 680-nm MOPA", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273780

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