Half-wave cavity vertical-cavity surface-emitting lasers with native oxide/GaAs lower distributed Bragg reflectors

Diana L. Huffaker; Dennis G. Deppe

doi:10.1117/12.271062

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4 April 1997 Half-wave cavity vertical-cavity surface-emitting lasers with native oxide/GaAs lower distributed Bragg reflectors

Diana L. Huffaker, Dennis G. Deppe

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Proceedings Volume 3003, Vertical-Cavity Surface-Emitting Lasers; (1997) https://doi.org/10.1117/12.271062
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Data are presented on half-wave cavity vertical cavity surface emitting lasers using both oxide confinement and high contrast upper and lower distributed Bragg reflectors. Six pairs of MgF/ZnSe distributed Bragg reflectors make up the top mirror and 11 pairs of Al_xO_y/GaAs DBRs make up the lower DBR. The oxide layer thickness in the Al_xO_y/GaAs DBRs is less than a quarter-wavelength in order to reduce strain on the quantum well active region. The lasing characteristics of device sizes ranging from 7 micrometer to 1 micrometer are analyzed through spectral data, far field radiation patterns and lasing threshold.

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Diana L. Huffaker and Dennis G. Deppe "Half-wave cavity vertical-cavity surface-emitting lasers with native oxide/GaAs lower distributed Bragg reflectors", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271062

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