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4 April 1997 High-temperature 1.55-um vertical-cavity lasers through wafer fusion
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Abstract
In this work we report on 64 degree celsius continuous-wave operation of a 1.5 micrometer vertical cavity laser. This laser consists of two fused Al(Ga)As/GaAs mirrors with a strain-compensated InGaAsP/InP active region. Selective lateral oxidation is used for current confinement. Minimum room temperature threshold current is as low as 0.8 mA, and maximum cw output power is as high as 1 mW at 15 degrees Celsius. Pulsed operation is achieved up to 100 degrees Celsius.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Near M. Margalit, Klaus P. Streubel, Yijen Chiu, Eric R. Hegblom, Hong Q. Hou, John Edward Bowers, and Evelyn L. Hu "High-temperature 1.55-um vertical-cavity lasers through wafer fusion", Proc. SPIE 3003, Vertical-Cavity Surface-Emitting Lasers, (4 April 1997); https://doi.org/10.1117/12.271064
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