Paper
1 May 1997 Operational stability of 980-nm pump lasers at 200 mW and above
Albert Oosenbrug, Abram Jakubowicz
Author Affiliations +
Abstract
The understanding of failure mechanisms in InGaAs/AlGaAs 980 nm pump lasers has gained significantly in the last couple of years. Random failure reduction has been observed as a result of improved facet-passivation techniques, and improved packaging and chip technology. With todays wear-out extrapolation data and random-failure activation estimates, there is clearly outlook for operation at higher output- power levels (200 - 250 mW) than used so far at reasonably low random-failure rates and low failure-rate operation at lower power levels (e.g. 60 mW, 25 degree(s)C, towards 25 FIT?), which clearly stimulates the interest for application of 980 nm pumps in submarine applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albert Oosenbrug and Abram Jakubowicz "Operational stability of 980-nm pump lasers at 200 mW and above", Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); https://doi.org/10.1117/12.273836
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Cited by 9 scholarly publications.
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KEYWORDS
Semiconductor lasers

Mirrors

Failure analysis

Electrical breakdown

Laser stabilization

Optical amplifiers

Packaging

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