Strain-compensated InGaAs/GaAsP/InGaP laser

Niloy K. Dutta; William S. Hobson; Daryoosh Vakhshoori; John Lopata; George J. Zydzik

doi:10.1117/12.273832

1 May 1997 Strain-compensated InGaAs/GaAsP/InGaP laser

Niloy K. Dutta, William S. Hobson, Daryoosh Vakhshoori, John Lopata, George J. Zydzik

Proceedings Volume 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II; (1997) https://doi.org/10.1117/12.273832
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The performance characteristics of InGaAs/GaAsP/InGaP strain compensated laser emitting near 1.0 micrometers are reported. The ridge waveguide lasers have room temperature threshold current of 16 mA and differential quantum efficiency of 0.45 W/A/facet. Lasers with far field divergence of 17 degree(s) X 15 degree(s) have been fabricated. A small signal bandwidth of 38 GHz has been obtained using a strain compensated structure.

Citation Download Citation

Niloy K. Dutta, William S. Hobson, Daryoosh Vakhshoori, John Lopata, and George J. Zydzik "Strain-compensated InGaAs/GaAsP/InGaP laser", Proc. SPIE 3004, Fabrication, Testing, and Reliability of Semiconductor Lasers II, (1 May 1997); https://doi.org/10.1117/12.273832

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