Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product

Weishu Wu; Aaron R. Hawkins; John Edward Bowers

doi:10.1117/12.264251

22 January 1997 Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product

Weishu Wu, Aaron R. Hawkins, John Edward Bowers

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264251
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

In an InGaAs/Si avalanche photodetector (APD), Si is used as the multiplication material to provide avalanche gain, while InGaAs is used as the absorption material. High quantum efficiency, high gain-bandwidth product, and low noise for detection of wavelengths between 1.0 micrometer and 1.6 micrometer can be achieved in this way. We present possible design variations and analyze the performance of these APDs. Particular attention is paid to a 10 Gbit/s APD and we design InGaAs/Si APDs with a 3-dB bandwidth larger than 10 GHz and a gain-bandwidth product greater than 400 GHz.

Citation Download Citation

Weishu Wu, Aaron R. Hawkins, and John Edward Bowers "Design of InGaAs/Si avalanche photodetectors for 400-GHz gain-bandwidth product", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264251

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