Engineering the Schottky barrier heights in InGaAs metal-semiconductor-metal photodetectors

Walter A. Wohlmuth; Mohamed Arafa; Aaditya Mahajan; Patrick J. Fay; Ilesanmi Adesida

doi:10.1117/12.264253

22 January 1997 Engineering the Schottky barrier heights in InGaAs metal-semiconductor-metal photodetectors

Walter A. Wohlmuth, Mohamed Arafa, Aaditya Mahajan, Patrick J. Fay, Ilesanmi Adesida

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264253
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

An InGaAs metal-semiconductor-metal photodetector (MSMPD) that employs engineered Schottky barrier heights is proposed and demonstrated in this work. By engineering the barrier heights a significant decrease in dark current with no change in the responsivity or the bandwidth can be obtained in these devices in comparison to conventional MSMPDs. For MSMPDs with an electrode width and spacing of 2 micrometer, a photosensitive area of 2500 micrometer squared, and an applied bias of 5 V, dark currents of 1.42 nA, 381 pA, and 188 pA were obtained for the conventional Ti/Au, the conventional Pt/Ti/Pt/Au, and the engineered Pt/Ti/Pt/Au- Ti/Au MSMPDs, respectively. A Pt/Ti/Pt/Au-Ti/Au MSMPD with a 2 micrometer electrode width and spacing and a broad photosensitive area of 15625 micrometer squared exhibited a dark current density of 18.1 fA/micrometer squared which is lowest dark current density ever reported in literature for an InGaAs MSMPD. The responsivity and bandwidth of the conventional and the engineered MSMPDs was measured and was found to be virtually identical.

Citation Download Citation

Walter A. Wohlmuth, Mohamed Arafa, Aaditya Mahajan, Patrick J. Fay, and Ilesanmi Adesida "Engineering the Schottky barrier heights in InGaAs metal-semiconductor-metal photodetectors", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264253

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