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22 January 1997 GaAs metal-semiconductor-metal photodector mixers for microwave single-sideband modulation
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A new optical technique for microwave single sideband modulation is reported. It uses metal-semiconductor-metal Schottky photodiodes formed in a GaAs/Al0.3Ga0.7As materials system to detect microwave in-phase and quadrature signals on optical carriers. Modulation of the photodetector bias voltages results in a single sideband modulation of the microwave signal, rf and undesired-sideband suppression of 36 dB and 27 dB, respectively, were achieved. The optical wavelength was 850 nm, and the bandwidth of the photodetectors is greater than or equal to 29 GHz.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gordon Wood Anderson, L. Eugene Chipman, Francis J. Kub, Doewon Park, Michael Y. Frankel, Thomas F. Carruthers, John A. Modolo, Karl D. Hobart, and D. Scott Katzer "GaAs metal-semiconductor-metal photodector mixers for microwave single-sideband modulation", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997);

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