GaAs/AlGaAs traveling-wave electro-optic modulators

Ralph Spickermann; Steve Sakamoto; Nadir Dagli

doi:10.1117/12.264228

22 January 1997 GaAs/AlGaAs traveling-wave electro-optic modulators

Ralph Spickermann, Steve Sakamoto, Nadir Dagli

Proceedings Volume 3006, Optoelectronic Integrated Circuits; (1997) https://doi.org/10.1117/12.264228
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A GaAs/AlGaAs traveling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. Using appropriate electrode engineering velocity matching with matched impedance and low microwave loss was achieved. Device had a measured electrical bandwidth greater than 40 GHz at 1.55 micrometer. The measured bandwidth at 1.3 micrometer was 37 GHz. The mechanism limiting the bandwidth was identified as phase velocity matching rather than group velocity matching.

Citation Download Citation

Ralph Spickermann, Steve Sakamoto, and Nadir Dagli "GaAs/AlGaAs traveling-wave electro-optic modulators", Proc. SPIE 3006, Optoelectronic Integrated Circuits, (22 January 1997); https://doi.org/10.1117/12.264228

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