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25 April 1997 Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3- to 1.55-μm wavelength range
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We present results on epitaxial SiGeC alloy layers grown on Si substrates for optical receiver applications in the 1.3 - 1.55 micrometers wavelength range. The active absorbing layer of the pin photodiodes consist of a strained SiGeC alloy. The SiGeC alloy has a Ge content of 55% and 40%, with a thickness of 80 nm and 200 nm, respectively. TEM images review a high quality epitaxial film with a sharp interface between the SiGeC layer and the Si substrate. The devices show a breakdown voltage of about 6 V. Both surface normal and waveguide structures have been fabricated, and optical response extending to 1.55 micrometers has been demonstrated. At normal incidence the external quantum efficiency of the device with a 55%-Ge content is close to 1% at 1.3 micrometers . For a waveguide structure of 400-micrometers length the external quantum efficiency is 8% at 1.3 micrometers , and limited by the fiber coupling coefficient.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred F.Y. Huang, Michael Chu, Kang Lung Wang, Paul D. Trinh, and Bahram Jalali "Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3- to 1.55-μm wavelength range", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997);


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