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25 April 1997 Ge1-xCx/Si heterojunction photodiode
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Abstract
We report on the fabrication and characterization of a photodiode made from a heterojunction of epitaxial p-type Ge1-xCx on an n-type Si substrate. Epitaxial Ge1-xCx layers with carbon percentages of 0.2, 0.8, 1.4 and 2% were grown on (100) Si substrates by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification with low reverse saturation current (2 at -1 volt) and high reverse breakdown voltage in excess of -40 volts. Despite the large number of dislocations and defects at the heterojunction, photoresponsivity was observed from the p- Ge1-xCx/n-Si diodes using laser excitation at a wavelength of 1.3 micrometers . External quantum efficiency was measured between 1.2 and 2.3%.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoping Shao, Sean L. Rommel, Bradley A. Orner, H. Feng, Michael W. Dashiell, James Kolodzey, and Paul Raymond Berger "Ge1-xCx/Si heterojunction photodiode", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273850
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