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25 April 1997 Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots
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Abstract
Arrays of 40 - 50 nm quantum dots were fabricated from Si- Si1-xGex single quantum well and superlattice structures grown by molecular beam epitaxy. The dots showing strong luminescence were studied by synchrotron source x-ray diffraction. Some of the dots were coated with SiNx films containing different build-in stresses. It was found that the luminescence intensity depends strongly on the amount of stress in the SiNx coating, being strongest when the stress was close to zero. A strain symmetrization process occurred in the bright dots. Although an exact physical origin is not yet available, it is exciting that these quantum dot diodes work at room temperature and that the whole fabrication procedure is compatible with Si- technology.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yin-Sheng Tang, Simon E. Hicks, Chris D. W. Wilkinson, C.M. Sotomayor Torres, W. X. Ni, Jens Birch, J. B. Joelsson, Goeran V. Hansson, A. Kvick, and K. L. Wang "Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273851
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