Integration of LIGA structures with CMOS circuitary

Stefan Stadler; Pratul K. Ajmera

doi:10.1117/12.276612

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19 June 1997 Integration of LIGA structures with CMOS circuitary

Stefan Stadler, Pratul K. Ajmera

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Proceedings Volume 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS; (1997) https://doi.org/10.1117/12.276612
Event: Smart Structures and Materials '97, 1997, San Diego, CA, United States

Abstract

Successful direct integration of a mechanical structure fabricated by LIGA on a Si chip containing CMOS circuitry has been achieved in this work. A 1D cantilever accelerometer is chosen as a vehicle to demonstrate this integration process. The capacitive sensor element employs one electrode formed in the Si substrate during the integrated circuit fabrication. The other electrode is fabricated using the LIGA technique with sacrificial layer etching. Details of the fabrication process to achieve this integration are given. Need for careful control of stress in the deposited layers and achieving appropriate contrast in the X-ray mask are delineated.

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Stefan Stadler and Pratul K. Ajmera "Integration of LIGA structures with CMOS circuitary", Proc. SPIE 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS, (19 June 1997); https://doi.org/10.1117/12.276612

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