Paper
7 July 1997 Scattered-light alignment system using SiC mask for x-ray lithography
Tsutomu Miyatake, Masaoki Hirose, Tsutomu Shoki, Ryo Ohkubo, Kuniaki Yamazaki
Author Affiliations +
Abstract
We propose a novel alignment method using scattered-light, which has high sensitivity to a silicon carbide x-ray mask without coating antireflection films and opaque film. The scattered-light alignment system is a video-based alignment utilizing the white-light (lambda equals 400 - 700 nm in wavelength) scatted on pattern edge of the alignment marks. A two dimensional periodic array is used for both mask and wafer marks. The scattered-light are focused onto field charge coupled devices camera through lenses by a magnification of 100 times. The alignment optical unit equipped with the field camera is located out of x-ray exposure field. Mask to wafer displacement is detected by means of video image processing. We have obtained position-sensing repeatability of 4.8 nm (3 sigma) by using combination between the polished silicon carbide mask and nitride processed wafer. The alignment signal indicated a high signal to noise ratio of 41.9 and 33.4 dB for the mask and wafer marks, respectively.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Miyatake, Masaoki Hirose, Tsutomu Shoki, Ryo Ohkubo, and Kuniaki Yamazaki "Scattered-light alignment system using SiC mask for x-ray lithography", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275780
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Cited by 2 scholarly publications.
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KEYWORDS
Optical alignment

Photomasks

Semiconducting wafers

Silicon carbide

X-rays

Objectives

X-ray lithography

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