Paper
7 July 1997 Stability and stiffness characteristics of the national x-ray mask standard
Adam H. Fisher, Michael A. Sprague, Roxann L. Engelstad, Daniel L. Laird, Steven C. Nash
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Abstract
Finite element analyses have been performed to investigate the stability and stiffness characteristics of the ARPA-NIST National X-ray Mask Standard. The use of different materials (such as silicon carbide and Pyrex) for the support ring has been studied to identify the effects on the maximum in-plane mounting distortions (within a 50 mm by 50 mm patterned area). Additional finite element calculations have been completed to determine the out-of-plane distortions (or bowing) of the mask due to the fabrication process. Parametric studies have been performed to identify the stiffness characteristics of the mask as the overall ring thickness is reduced while the wafer thickness is increased. Results show how various design parameters can be controlled to repeatedly fabricate masks that fulfill requirements for sub-0.13 micrometer technology.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam H. Fisher, Michael A. Sprague, Roxann L. Engelstad, Daniel L. Laird, and Steven C. Nash "Stability and stiffness characteristics of the national x-ray mask standard", Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); https://doi.org/10.1117/12.275789
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CITATIONS
Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Semiconducting wafers

Photomasks

Silicon carbide

Silicon

X-rays

Standards development

Etching

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