Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters

Clifford L. Henderson; Pavlos C. Tsiartas; Lewis W. Flanagin; Sanju Pancholi; Sajed A. Chowdhury; Katherine D. Dombrowski; Ammar N. Chinwalla; C. Grant Willson

doi:10.1117/12.275820

7 July 1997 Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters

Clifford L. Henderson, Pavlos C. Tsiartas, Lewis W. Flanagin, Sanju Pancholi, Sajed A. Chowdhury, Katherine D. Dombrowski, Ammar N. Chinwalla, C. Grant Willson

Author Affiliations +

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275820
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

In the past, resist parameters (exposure and development parameters) were typically only available for a single set of processing conditions. Therefore, it has been impossible to explore the effect of processing conditions on resist performance using simulation. In this work, a statistical experimental design and response surface analysis technique was used in conjunction with our improved parameter extraction techniques to investigate the effect of processing conditions on the exposure and development parameters for a commercial i- line resist. The effect of soft bake time and temperature on the exposure parameters and the effect of soft bake temperature, soft bake time, post-exposure bake temperature, and post-exposure bake time on development parameters is discussed. Using this information, it is possible for the first time to consider optimizing resist processing conditions using lithographic simulations.

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Clifford L. Henderson, Pavlos C. Tsiartas, Lewis W. Flanagin, Sanju Pancholi, Sajed A. Chowdhury, Katherine D. Dombrowski, Ammar N. Chinwalla, and C. Grant Willson "Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275820

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