Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

Zheng Cui; R. A. Moody; Ian M. Loader; John G. Watson; Philip D. Prewett

doi:10.1117/12.275869

7 July 1997 Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

Zheng Cui, R. A. Moody, Ian M. Loader, John G. Watson, Philip D. Prewett

Author Affiliations +

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275869
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Chemically amplified resist AZPN114 from Hoechst has been extensively investigated for electron beam lithography at 150 nm resolution and below, using commercial e-beam lithography systems. Experimental design method was used to study the combined effect of pre and post exposure bake conditions on the performance of AZPN114 at 150 nm nominal linewidth. The effects of scanning field size of an e-beam system, the exposure energy, the resist thickness an pattern density, development conditions and post exposure delay have been investigated on resist sensitivity and resolution capability. One hundred nm resist lines with 7:1 aspect ratio and 50 nm resolution have been achieved using AZPN114 with optimized exposure and process conditions.

Citation Download Citation

Zheng Cui, R. A. Moody, Ian M. Loader, John G. Watson, and Philip D. Prewett "Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275869

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