Wafer-cleaning process after plasma metal etch

Didier Louis; Wai-Mun Lee; Douglas Holmes

doi:10.1117/12.275904

7 July 1997 Wafer-cleaning process after plasma metal etch

Didier Louis, Wai-Mun Lee, Douglas Holmes

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275904
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The developments associated with a new plasma etching technique for sub micron process using DUV resist has placed a new requirement on wafer cleaning technology. Not only does it require a chemical solution to remove the etching residue, it is desirable to reduce residual chlorine. In our study, a metal stack, including TiN ARC 400 angstroms/AlCu 6500 angstrom/ barrier TiN 600 angstrom, is patterned with DUV resist and etched in a single wafer etcher. The chlorine level on the wafer surface is determined using WDXRF analysis. We have made morphological observations of the wafer cleanliness using field emission scanning electron microscopy.

Citation Download Citation

Didier Louis, Wai-Mun Lee, and Douglas Holmes "Wafer-cleaning process after plasma metal etch", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275904

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