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7 July 1997 Monte Carlo simulation of charging effects on linewidth metrology
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Abstract
The charging effects have been investigated when the linewidth of the insulator is measured by scanning electron microscope in secondary electron detection mode and with the low accelerating voltage around 1 kV. The yield of the electron generation is near the unity for most material under low voltage condition, and is slightly different from unity depending on the material and geometry of the pattern. For insulators, however, such a yield difference leads to locally different charge accumulation which influences on the measured linewidth. In this paper the influence of the charging effects on linewidth in PMMA/Si wafer is analyzed by Monte Carlo method as the operating condition and geometrical shape changes.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeong-Uk Ko "Monte Carlo simulation of charging effects on linewidth metrology", Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); https://doi.org/10.1117/12.275943
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