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7 July 1997 DOF enhancement of isolated line patterns by newly developed assistant pattern method
Seiji Matsuura, Takeo Hashimoto, Takayuki Uchiyama, Masashi Fujimoto, Kunihiko Kasama
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Proceedings Volume 3051, Optical Microlithography X; (1997) https://doi.org/10.1117/12.275967
Event: Microlithography '97, 1997, Santa Clara, CA, United States
Abstract
To enhance depth of focus (DOF) for isolated line patterns, we have developed a new assistant pattern method. In this method, opaque additional patterns are placed beside the attenuated phase-shift main pattern. DOF enhancement effects of this and conventional assistant pattern method were evaluated by means of a KrF excimer exposure tool with variable NA (0.45, 0.50 and 0.55). Using the new method with off-axis illumination, we obtained 1.5 micrometers DOF for 0.25 micrometers isolated line pattern, much wider than that achieved in the conventional method (0.9 micrometers ). Furthermore, we confirmed that this new method was effective not only for improving the exposure dose latitude but also for reducing the optical proximity effect.
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Seiji Matsuura, Takeo Hashimoto, Takayuki Uchiyama, Masashi Fujimoto, and Kunihiko Kasama "DOF enhancement of isolated line patterns by newly developed assistant pattern method", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.275967
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KEYWORDS
Excimers
Opacity
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