Effects of excimer laser radiation on attenuated phase-shift masking materials

Bruce W. Smith; Lena Zavyalova; Shahid A. Butt; Anatoly Bourov; Nathan Bergman; Carlos A. Fonseca; Zulfiquar Alam

doi:10.1117/12.276051

7 July 1997 Effects of excimer laser radiation on attenuated phase-shift masking materials

Bruce W. Smith, Lena Zavyalova, Shahid A. Butt, Anatoly Bourov, Nathan Bergman, Carlos A. Fonseca, Zulfiquar Alam

Proceedings Volume 3051, Optical Microlithography X; (1997) https://doi.org/10.1117/12.276051
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The use of attenuated phase-shift masking materials is being considered as one of the key resolution enhancement techniques for sub-0.18 micrometers lithography. In addition to proper optical performance, films for use at DUV and 193 nm wavelengths require suitable plasma etch characteristics and stability at mask exposure levels of pulse excimer lasers. This may limit practical materials to those which allow suitably volatile etch bi-products and possess stable stoichiometric composition. Several film families have been produced which can deliver a (pi) phase shift and 4 - 15% transmission within a single films thickness including Al/AlN, MoSiO, TaSiO, Zr/ZrN, Si_xN_y, and TaN/Si₃N₄. Of these materials, TaSiO, Si_xN_y, and TaN/Si₃N₄, allow for adequate plasma etch performance with selectivity to fused silica and resist. Excimer laser 193 nm exposure at fluences corresponding to mask exposure levels show some degree of optical degradation of materials prone to oxidation.

Citation Download Citation

Bruce W. Smith, Lena Zavyalova, Shahid A. Butt, Anatoly Bourov, Nathan Bergman, Carlos A. Fonseca, and Zulfiquar Alam "Effects of excimer laser radiation on attenuated phase-shift masking materials", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276051

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