Line-width variation with different sublayers for 0.25-um minimum feature size in DUV lithography

Hye-Keun Oh; Young-Seon Cho; Yeon-Un Jeong; Hoyoung Kang; Gun-Sang Lee; Ilsin An; In-Ho Park

doi:10.1117/12.276021

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7 July 1997 Line-width variation with different sublayers for 0.25-μm minimum feature size in DUV lithography

Hye-Keun Oh, Young-Seon Cho, Yeon-Un Jeong, Hoyoung Kang, Gun-Sang Lee, Ilsin An, In-Ho Park

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Proceedings Volume 3051, Optical Microlithography X; (1997) https://doi.org/10.1117/12.276021
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

The line width variations with various illumination types and sublayers are studied for deep UV light source and developed 0.25 micrometers isolated line pattern. The line width variation comes mainly from the reflectivity variation caused by multiple thin film interference effect. Compared to the conventional normal illumination, off-axis illumination shows bigger variation due to larger reflectance and worse aerial image around the best focus. The swing curves of several sublayers show different swing ratios and they depend on the optical properties and the thickness of sublayers. Antireflection coating (ARC) should be used in order to control the line width and the desired variation of less than 0.05 micrometers can be obtained with 0.19 micrometers thick ARC whose refractive index is 1.663 + 0.2 i. We also find that it will provide better latitude and line width control as well as more throughput when we used the resist thickness that will give minimum line width in the swing curve.

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Hye-Keun Oh, Young-Seon Cho, Yeon-Un Jeong, Hoyoung Kang, Gun-Sang Lee, Ilsin An, and In-Ho Park "Line-width variation with different sublayers for 0.25-μm minimum feature size in DUV lithography", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276021

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