Paper
7 July 1997 Model-based optical proximity correction including effects of photoresist processes
Jiangwei Li, Douglas A. Bernard, Juan C. Rey, Victor V. Boksha
Author Affiliations +
Abstract
In this paper, a new automatic model-based Optical Proximity Correction (OPC) approach is reported. It combines a fast aerial image solver and a physically based empirical resist model. The fast aerial image calculation is achieved by using the algorithm of the coherent decomposition of the partially coherent optical systems. The first order resist model of Brunner is extended to accommodate intensity log- slope variations. The modified model can be calibrated by either experimental data or resist process simulations. In this paper, resist simulations using Depict are selected to fit the model parameters. Defocus effects in OPC are also discussed. A new scheme that combines edge biasing and the addition of sub-resolution features is shown to greatly improve the process latitude.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiangwei Li, Douglas A. Bernard, Juan C. Rey, and Victor V. Boksha "Model-based optical proximity correction including effects of photoresist processes", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276057
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Optical proximity correction

Systems modeling

Model-based design

Photoresist materials

Data modeling

Process modeling

Calibration

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