Sapphire's loss of strength between 20 degrees and 1000 degrees Celsius depends on orientation and state of stress. The critical weakness of sapphire occurs in compression along the c-axis of the crystal. In flexure tests of sapphire that is not subject to c-axis compression, the strength actually increases between 20 degrees and 1000 degrees Celsius. Compression on the c-axis causes twinning on rhombohedral crystal planes. When twins on different planes intersect, a crack forms and the specimen is then subject to tensile failure. Doping with Mg2+, Ti4+, or introduction of a TiO2 second phase each doubled the c-axis compressive strength of sapphire at 600 degrees Celsius, probably by inhibiting twin propagation. X-ray topography was employed to investigate the relationship between surface and bulk defects and mechanical strength in sapphire. Low angle grain boundaries were not associated with mechanical weakness. Wide, transverse scratches that are evident to x-rays, but not obvious in optical microscopy, can weaken sapphire. Topography demonstrated that annealing reduces long range strain in polished sapphire.
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