Paper
27 June 1997 Infrared properties of CVD B-SiC
Stefan K. Andersson, Michael E. Thomas
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Abstract
The temperature and frequency dependent infrared properties of polycrystalline CVD (beta) -SiC have been measured. This was accomplished using both broadband and narrowband (laser) measurements as a function of temperature from room temperature up to 900 degrees Kelvin. Calculated multiphonon absorption shows good agreement with experiments. Furthermore the thermo-optic coefficient was measured in the 2.5 - 5 micrometer region and the BSDF for CVD (beta) -SiC was measured at 0.6328 micrometer for the first time.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan K. Andersson and Michael E. Thomas "Infrared properties of CVD B-SiC", Proc. SPIE 3060, Window and Dome Technologies and Materials V, (27 June 1997); https://doi.org/10.1117/12.277056
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Cited by 5 scholarly publications.
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KEYWORDS
Absorption

Temperature metrology

Transmittance

Refraction

Chemical vapor deposition

Data modeling

Silicon carbide

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