New reflow process for indium bump

Young-Ho Kim; Jong Hwa Choi; Kang-Sik Choi; Hee Chul Lee; Choong-Ki Kim

doi:10.1117/12.280315

13 August 1997 New reflow process for indium bump

Young-Ho Kim, Jong Hwa Choi, Kang-Sik Choi, Hee Chul Lee, Choong-Ki Kim

Proceedings Volume 3061, Infrared Technology and Applications XXIII; (1997) https://doi.org/10.1117/12.280315
Event: AeroSense '97, 1997, Orlando, FL, United States

Abstract

A new reflow method for indium bump of hybridized HgCdTe IRFPA is proposed using H₂ plasma. Twenty micrometer height indium bump is easily achieved with this method. In the new method, H₂ plasma makes the indium bump surface clean with removing the oxidized indium by H radical chemical reaction. Simultaneously, H₂ plasma increases the temperature of indium bump above 160 degrees Celsius. This sphere shaped bump is easily deformed plastically with relatively small force. Force of 2 g/bump changes the 20 micrometer height bump to 10 micrometer. The flip-chip bonding technique using the new reflow method is characterized with shear strain strength measurement. It is found that bonding reliability can be improved owing to increased height and smooth surface.

Citation Download Citation

Young-Ho Kim, Jong Hwa Choi, Kang-Sik Choi, Hee Chul Lee, and Choong-Ki Kim "New reflow process for indium bump", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); https://doi.org/10.1117/12.280315

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