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13 August 1997 Suppression of reverse bias tunneling current in HgCdTe photodiodes formed by rapid thermal diffusion
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Abstract
In this paper, we report electrical and optical properties of the rapid thermal diffused (RTD) p-n junction photodiodes fabricated on LPE-grown p-type Hg0.70Cd0.30Te/CdZnTe substrate. In comparison with the ion implanted p-n junction on the same substrate, the reverse bias tunneling current is drastically suppressed in the RTD junction. The spectral photo-response of indium diffused HgCdTe photodiode shows the high quantum efficiency and the detectivity of 1.3 by 1011 cm/Hz1/2W. The suppression of the reverse bias leakage current, high quantum efficiency and low noise of the RTD photodiode could be explained by the suppression of the electrical active defects generation in the depletion region during the junction formation. The extracted carrier lifetime in the junction depletion region of the RTD HgCdTe photodiodes is larger than that of the ion-implanted one.
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Seung-Man Park, Jae Mook Kim, Hee Chul Lee, and Choong-Ki Kim "Suppression of reverse bias tunneling current in HgCdTe photodiodes formed by rapid thermal diffusion", Proc. SPIE 3061, Infrared Technology and Applications XXIII, (13 August 1997); https://doi.org/10.1117/12.280325
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